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Verway Transition Lead To Semiconducitng To Metallic Behaviour Near 120 K

†Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
‡Department of Chemistry, Northwestern University, Evanston, Illinois 60208, United States
§Department of Medicine, Northwestern University, Evanston, Illinois 60208, United States

The two samples exhibit a metal–semiconductor transition temperature T MS which decreases from 160 to 120 K when increasing Ni content from x = 0 to x = 0.1. The total conductance curves for samples are found to obey Jonscher power law G(ω) = G DC + Aω n.

The pressure dependence of the critical temperature for the discontinuous metal-antiferromagnetic-insulator transition as well as the temperature dependence of the magnetic susceptibility track in. Spin and B site spin and ferromagnetic within each sublattice. Magnetite has a clear metal-insulator transition at T V ≈ 120 K known as the Verwey transition, where electrical resistivity abruptly jumps up by more than two orders of magnitude as temperature decreases.1.

∥Department of Electrical Engineering and Computer Science, Northwestern University, Evanston, Illinois 60208, United States

Abstract

Two-dimensional (2D) semiconducting transition metal dichalcogenides (TMDCs) and black phosphorus (BP) have beneficial electronic, optical, and physical properties at the few-layer limit. As atomically thin materials, 2D TMDCs and BP are highly sensitive to their environment and chemical modification, resulting in a strong dependence of their properties on substrate effects, intrinsic defects, and extrinsic adsorbates. Furthermore, the integration of 2D semiconductors into electronic and optoelectronic devices introduces unique challenges at metal–semiconductor and dielectric–semiconductor interfaces. Here, we review emerging efforts to understand and exploit chemical effects to influence the properties of 2D TMDCs and BP. In some cases, surface chemistry leads to significant degradation, thus necessitating the development of robust passivation schemes. On the other hand, appropriately designed chemical modification can be used to beneficially tailor electronic properties, such as controlling doping levels and charge carrier concentrations. Overall, chemical methods allow substantial tunability of the properties of 2D TMDCs and BP, thereby enabling significant future opportunities to optimize performance for device applications.

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Verwey Transition Lead To Semiconducitng To Metallic Behaviour Near 120 K

SemiconducitngVerwey transition lead to semiconducitng to metallic behaviour near 120 kVerwey transition lead to semiconducitng to metallic behaviour near 120 k

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